| Срок поставки и цена – по запросу |
IGBT Module; Transistor Type:IGBT; Transistor Polarity:Dual NPN; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:960W; Collector Emitter Voltage, V(br)ceo:1200V ;RoHS Compliant: Yes
| Transistor Polarity | N Channel |
| DC Collector Current | 150A |
| Collector Emitter Saturation Voltage Vce(on) | 1.2kV |
| Power Dissipation Pd | 960W |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| No. of Pins | 7Pins |
| polarity | N-Channel |
| pin_count | 7 |
| rohs_status | Compliant |
| mounting_style | Chassis |
Аналоги
