| Срок поставки и цена – по запросу |
IGBT MODULE, 1.2KV, 200A; Transistor Pol; IGBT MODULE, 1.2KV, 200A; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Voltage Vces:1.2kV; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:7
| Transistor Polarity | N Channel |
| DC Collector Current | 200A |
| Collector Emitter Saturation Voltage Vce(on) | 1.2kV |
| Power Dissipation Pd | 890W |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| No. of Pins | 7Pins |
| polarity | N-Channel |
| pin_count | 7 |
| rohs_status | Compliant |
| mounting_style | Chassis |
Аналоги
