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IGBT Module; Transistor Type:IGBT; Transistor Polarity:Dual NPN; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):5V; Power Dissipation, Pd:1040W; Collector Emitter Voltage, V(br)ceo:1200V ;RoHS Compliant: Yes
polarity | N-Channel |
pin_count | 7 |
rohs_status | Compliant |
mounting_style | Chassis |
Transistor Polarity | N Channel |
DC Collector Current | 400A |
Collector Emitter Saturation Voltage Vce(on) | 1.2kV |
Power Dissipation Pd | 1.04kW |
Collector Emitter Voltage V(br)ceo | 1.2kV |
No. of Pins | 7 |
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