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The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
lead_free_status | Lead Free |
rohs_status | Compliant |
mounting_style | Surface Mount |
isolation_voltage | 5.30 kV |
packaging | Tape & Reel (TR) |
input_voltage_dc | 1.35 V |
number_of_circuits | 1 |
lifecycle_status | Active |
output_voltage | 70.0 V (max) |
number_of_channels | 1 |