• DE275-501N16A
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MOSFET, N, RF, DE275; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:500V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:590W; Transistor Case Style:DE-275; No. of Pins:6; SVHC:No SVHC (19-Dec-2012); Capacitance Ciss Typ:1800pF; Current Id Max:16A; Package / Case:DE-275; Power Dissipation Pd:590W; Power Dissipation Pd:590W; Rise Time:2ns; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:15V

Количество в упаковке1
Вес2.1 г
polarityN-Channel
id_continuous_drain_current16.0 A
lead_free_statusLead Free
vds_drain_to_source_voltage500 V
reach_svhc_complianceNo SVHC
breakdown_voltage_drain_to_source500 V
rise_time2.00 ns
rohs_statusCompliant
pin_count6
power_dissipation590 W
Drain Source Voltage Vds500V
Continuous Drain Current Id16A
Power Dissipation Pd590W
Operating Frequency Min-
Operating Frequency Max100MHz
RF Transistor CaseDE-275
No. of Pins6Pins
Operating Temperature Max175°C
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Transistor PolarityN Channel
Transistor TypeRF MOSFET
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