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MOSFET, N, RF, DE275; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:500V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:590W; Transistor Case Style:DE-275; No. of Pins:6; SVHC:No SVHC (19-Dec-2012); Capacitance Ciss Typ:1800pF; Current Id Max:16A; Package / Case:DE-275; Power Dissipation Pd:590W; Power Dissipation Pd:590W; Rise Time:2ns; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:15V
Количество в упаковке | 1 |
Вес | 2.1 г |
polarity | N-Channel |
id_continuous_drain_current | 16.0 A |
lead_free_status | Lead Free |
vds_drain_to_source_voltage | 500 V |
reach_svhc_compliance | No SVHC |
breakdown_voltage_drain_to_source | 500 V |
rise_time | 2.00 ns |
rohs_status | Compliant |
pin_count | 6 |
power_dissipation | 590 W |
Drain Source Voltage Vds | 500V |
Continuous Drain Current Id | 16A |
Power Dissipation Pd | 590W |
Operating Frequency Min | - |
Operating Frequency Max | 100MHz |
RF Transistor Case | DE-275 |
No. of Pins | 6Pins |
Operating Temperature Max | 175°C |
Product Range | - |
MSL | - |
SVHC | No SVHC (12-Jan-2017) |
Transistor Polarity | N Channel |
Transistor Type | RF MOSFET |
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