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MOSFET, N, RF, DE475; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:1.8kW; Transistor Case Style:DE-475; No. of Pins:6; SVHC:No SVHC (19-Dec-2012); Capacitance Ciss Typ:5500pF; Current Id Max:24A; Package / Case:DE-475; Power Dissipation Pd:1.8kW; Power Dissipation Pd:1.8kW; Rise Time:5ns; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:15V
polarity | N-Channel |
id_continuous_drain_current | 24.0 A |
power_dissipation | 1.80 kW |
reach_svhc_compliance | No SVHC |
rise_time | 5.00 ns |
mounting_style | Surface Mount |
rohs_status | Compliant |
pin_count | 6 |
Drain Source Voltage Vds | 1kV |
Continuous Drain Current Id | 24A |
Power Dissipation Pd | 1.8kW |
Operating Frequency Min | - |
Operating Frequency Max | 30MHz |
RF Transistor Case | DE-475 |
No. of Pins | 6Pins |
Operating Temperature Max | 175°C |
Product Range | - |
MSL | - |
SVHC | No SVHC (12-Jan-2017) |
Transistor Polarity | N Channel |
Transistor Type | RF MOSFET |
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