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These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
| polarity | Dual N-Channel |
| input_capacitance | 9.50 pF |
| voltage_rating_dc | 25.0 V |
| id_continuous_drain_current | 220 mA |
| gate_charge | 490 pC |
| breakdown_voltage_drain_to_source | 25.0 V |
| vds_drain_to_source_voltage | 25.0 V |
| current_rating | 220 mA |
| lead_free_status | Lead Free |
| reach_svhc_compliance | No SVHC |
| mounting_style | Surface Mount |
| packaging | Cut Tape (CT) |
| case_package | SSOT |
| rds_drain_to_source_resistance_on | 38.0 mΩ |
| rise_time | 4.50 ns |
| lifecycle_status | Active |
| rohs_status | Compliant |
| pin_count | 6 |
| power_dissipation | 900 mW |
| Transistor Polarity | Dual N Channel |
| Continuous Drain Current Id | 220mA |
| Drain Source Voltage Vds | 25V |
| On Resistance Rds(on) | 5ohm |
| Rds(on) Test Voltage Vgs | 4.5V |
| Threshold Voltage Vgs | 850mV |
| Power Dissipation Pd | 900mW |
| Transistor Case Style | SuperSOT |
| No. of Pins | 6Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (15-Jun-2015) |
| Current Id Max | 220mA |
| Operating Temperature Min | -55°C |
| Operating Temperature Range | -55°C to +150°C |
| Packaging | Cut Tape |
| Termination Type | Surface Mount Device |
| Voltage Vds Typ | 25V |
| Voltage Vgs Max | 850mV |
| Voltage Vgs Rds on Measurement | 2.7V |
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