• FDC6333C
  • FDC6333C
  • FDC6333C
  • FDC6333C
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These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

polarityN-Channel, P-Channel
input_capacitance185 pF
current_rating2.50 A
id_continuous_drain_current2.50 A, 2.00 A
gate_charge4.10 nC
breakdown_voltage_drain_to_source30.0 V
vds_drain_to_source_voltage30.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingTape & Reel (TR), Cut Tape (CT)
case_packageSSOT
rds_drain_to_source_resistance_on95.0 mΩ
rise_time13.0 ns
lifecycle_statusActive
rohs_statusCompliant
pin_count6
power_dissipation960 mW
Transistor PolarityN and P Channel
Continuous Drain Current Id2.5A
Drain Source Voltage Vds30V
On Resistance Rds(on)0.095ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs1.8V
Power Dissipation Pd960mW
Transistor Case StyleSuperSOT
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Current Id Max2.5A
Termination TypeSurface Mount Device
Voltage Vds Typ30V
Voltage Vgs Max1.8V
Voltage Vgs Rds on Measurement10V
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