• FDC638APZ
  • FDC638APZ
  • FDC638APZ
  • FDC638APZ
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This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion.

polarityP-Channel
voltage_rating_dc-12.0 V
id_continuous_drain_current-4.50 A
gate_charge12.0 nC
power_dissipation1.60 W
vds_drain_to_source_voltage-20.0 V
current_rating-4.50 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSSOT
rds_drain_to_source_resistance_on43.0 mΩ
rohs_statusCompliant
pin_count6
Transistor PolarityP Channel
Continuous Drain Current Id4.5A
Drain Source Voltage Vds-20V
On Resistance Rds(on)0.037ohm
Rds(on) Test Voltage Vgs12V
Threshold Voltage Vgs-800mV
Power Dissipation Pd1.6W
Transistor Case StyleSuperSOT
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max-4.5A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Termination TypeSurface Mount Device
Voltage Vds-20V
Voltage Vds Typ-20V
Voltage Vgs Max-800mV
Voltage Vgs Rds on Measurement-4.5V
Voltage Vgs th Max-1.5V
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