FDC638APZ Купить в Москве

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This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion.

polarity	P-Channel
voltage_rating_dc	-12.0 V
id_continuous_drain_current	-4.50 A
gate_charge	12.0 nC
power_dissipation	1.60 W
vds_drain_to_source_voltage	-20.0 V
current_rating	-4.50 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Cut Tape (CT)
case_package	SSOT
rds_drain_to_source_resistance_on	43.0 mΩ
rohs_status	Compliant
pin_count	6
Transistor Polarity	P Channel
Continuous Drain Current Id	4.5A
Drain Source Voltage Vds	-20V
On Resistance Rds(on)	0.037ohm
Rds(on) Test Voltage Vgs	12V
Threshold Voltage Vgs	-800mV
Power Dissipation Pd	1.6W
Transistor Case Style	SuperSOT
No. of Pins	6Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Current Id Max	-4.5A
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Packaging	Cut Tape
Termination Type	Surface Mount Device
Voltage Vds	-20V
Voltage Vds Typ	-20V
Voltage Vgs Max	-800mV
Voltage Vgs Rds on Measurement	-4.5V
Voltage Vgs th Max	-1.5V