• FDC6401N
  • FDC6401N
  • FDC6401N
  • FDC6401N
  • FDC6401N
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This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

polarityN-Channel, Dual N-Channel
input_capacitance324 pF
voltage_rating_dc20.0 V
breakdown_voltage_gate_to_source-12.0 V to 12.0 V
id_continuous_drain_current3.00 A
gate_charge3.30 nC
breakdown_voltage_drain_to_source20.0 V
vds_drain_to_source_voltage20.0 V
current_rating3.00 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape & Reel (TR), Cut Tape (CT)
case_packageSSOT
rds_drain_to_source_resistance_on70.0 mΩ
rohs_statusCompliant
pin_count6
power_dissipation960 mW
Transistor PolarityDual N Channel
Continuous Drain Current Id3A
Drain Source Voltage Vds20V
On Resistance Rds(on)70mohm
Rds(on) Test Voltage Vgs4.5V
Threshold Voltage Vgs900mV
Power Dissipation Pd960mW
Transistor Case StyleSuperSOT
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
PackagingCut Tape
Continuous Drain Current Id, N Channel3A
Current Id Max3A
Drain Source Voltage Vds, N Channel20V
Module ConfigurationDual
On Resistance Rds(on), N Channel0.05ohm
Operating Temperature Range-55°C to +150°C
Termination TypeSurface Mount Device
Voltage Vds Typ20V
Voltage Vgs Max900mV
Voltage Vgs Rds on Measurement4.5V
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