• FDC658AP
  • FDC658AP
  • FDC658AP
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Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4mA; On Resistance, Rds(on):0.5ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V

polarityP-Channel
breakdown_voltage_gate_to_source-25.0 V to 25.0 V
id_continuous_drain_current4.00 mA
power_dissipation1.60 W
vds_drain_to_source_voltage30.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingTape & Reel (TR), Cut Tape (CT)
case_packageSSOT
rds_drain_to_source_resistance_on44.0 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count6
Transistor PolarityP Channel
Continuous Drain Current Id4A
Drain Source Voltage Vds-30V
On Resistance Rds(on)0.044ohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs-1.8V
Power Dissipation Pd1.6W
Transistor Case StyleSuperSOT
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
PackagingCut Tape
Current Id Max-4A
Operating Temperature Range-55°C to +150°C
Termination TypeSurface Mount Device
Voltage Vds-30V
Voltage Vds Typ-30V
Voltage Vgs Max-25V
Voltage Vgs Rds on Measurement-10V
Voltage Vgs th Max-3V
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