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This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

polarity	P-Channel
input_capacitance	1.55 nF
voltage_rating_dc	-40.0 V
breakdown_voltage_gate_to_source	-20.0 V to 20.0 V
id_continuous_drain_current	14.0 A
gate_charge	29.0 nC
breakdown_voltage_drain_to_source	40.0 V
vds_drain_to_source_voltage	40.0 V
current_rating	-14.0 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Tape & Reel (TR), Cut Tape (CT)
case_package	TO-252
rds_drain_to_source_resistance_on	44.0 Ω
rohs_status	Compliant
pin_count	3
power_dissipation	42.0 mW
Transistor Polarity	P Channel
Continuous Drain Current Id	14A
Drain Source Voltage Vds	-40V
On Resistance Rds(on)	0.036ohm
Rds(on) Test Voltage Vgs	20V
Threshold Voltage Vgs	-1.6V
Power Dissipation Pd	42mW
Transistor Case Style	TO-252
No. of Pins	3Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Operating Temperature Min	-55°C
Packaging	Cut Tape
Current Id Max	-6.7A
Operating Temperature Range	-55°C to +150°C
Pulse Current Idm	60A
Termination Type	Surface Mount Device
Voltage Vds Typ	-40V
Voltage Vgs Max	-1.6V
Voltage Vgs Rds on Measurement	-10V