• FDD8424H
  • FDD8424H
  • FDD8424H
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These dual N and P-channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Количество в упаковке5
КорпусTO-252
Вес0.568 г
polarityN-Channel, P-Channel
id_continuous_drain_current9.00 A
breakdown_voltage_drain_to_source40.0 V
vds_drain_to_source_voltage40.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
rds_drain_to_source_resistance_on24.0 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count5
power_dissipation3.10 W
Transistor PolarityN and P Channel
Continuous Drain Current Id9A
Drain Source Voltage Vds40V
On Resistance Rds(on)0.019ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs1.7V
Power Dissipation Pd3.1W
Transistor Case StyleTO-263
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Cont Current Id N Channel9A
Cont Current Id P Channel6.5A
Current Id Max9A
On State Resistance N Channel Max24mohm
On State Resistance P Channel Max54mohm
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Pulse Current Idm N Channel55A
Pulse Current Idm P Channel40A
Termination TypeSurface Mount Device
Voltage Vds Typ40V
Voltage Vgs Max1.7V
Voltage Vgs Rds on Measurement10V
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