• FDD8444
  • FDD8444
  • FDD8444
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MOSFET, N, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:17.5A; Resistance, Rds On:0.0052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:DPAK; Termination ;RoHS Compliant: Yes

polarityN-Channel
id_continuous_drain_current17.5 A
breakdown_voltage_drain_to_source40.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageTO-252
rds_drain_to_source_resistance_on5.20 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation153 W
Transistor PolarityN Channel
Continuous Drain Current Id17.5A
Drain Source Voltage Vds40V
On Resistance Rds(on)0.004ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs2.5V
Power Dissipation Pd227W
Transistor Case StyleTO-252
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Alternate Case StyleTO-252
Application CodeGP
Current Id Max50A
Current Temperature25°C
External Depth10.5mm
External Length / Height2.55mm
External Width6.8mm
Full Power Rating Temperature25°C
Junction to Case Thermal Resistance A0.66°C/W
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +175°C
PackagingCut Tape
Pulse Current Idm80A
Reverse Recovery Time trr Typ51ns
SMD MarkingFDD8444
Termination TypeSurface Mount Device
Voltage Vds Typ40V
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
Voltage Vgs th Max4V
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