FDMA1028NZ Купить в Москве

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This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

polarity	Dual N-Channel
input_capacitance	340 pF
voltage_rating_dc	20.0 V
breakdown_voltage_gate_to_source	-12.0 V to 12.0 V
id_continuous_drain_current	3.70 A
gate_charge	6.00 nC
breakdown_voltage_drain_to_source	20.0 V
vds_drain_to_source_voltage	20.0 V
current_rating	3.70 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Cut Tape (CT)
rds_drain_to_source_resistance_on	37.0 mΩ
rohs_status	Compliant
pin_count	8
power_dissipation	1.40 W
Transistor Polarity	Dual N Channel
Continuous Drain Current Id	3.7A
Drain Source Voltage Vds	20V
On Resistance Rds(on)	68mohm
Rds(on) Test Voltage Vgs	1V
Threshold Voltage Vgs	1V
Power Dissipation Pd	1.4W
Transistor Case Style	µFET
No. of Pins	8Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Current Id Max	3.7A
Current Temperature	25°C
Full Power Rating Temperature	25°C
Junction Temperature Tj Max	150°C
Junction Temperature Tj Min	-55°C
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Packaging	Cut Tape
Pulse Current Idm	6A
SMD Marking	028
Termination Type	Surface Mount Device
Voltage Vds	20V
Voltage Vds Typ	20V
Voltage Vgs Max	12V
Voltage Vgs Rds on Measurement	4.5V
Voltage Vgs th Max	1.5V