• FDMA1028NZ
  • FDMA1028NZ
  • FDMA1028NZ
  • FDMA1028NZ
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This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

polarityDual N-Channel
input_capacitance340 pF
voltage_rating_dc20.0 V
breakdown_voltage_gate_to_source-12.0 V to 12.0 V
id_continuous_drain_current3.70 A
gate_charge6.00 nC
breakdown_voltage_drain_to_source20.0 V
vds_drain_to_source_voltage20.0 V
current_rating3.70 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
rds_drain_to_source_resistance_on37.0 mΩ
rohs_statusCompliant
pin_count8
power_dissipation1.40 W
Transistor PolarityDual N Channel
Continuous Drain Current Id3.7A
Drain Source Voltage Vds20V
On Resistance Rds(on)68mohm
Rds(on) Test Voltage Vgs1V
Threshold Voltage Vgs1V
Power Dissipation Pd1.4W
Transistor Case StyleµFET
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max3.7A
Current Temperature25°C
Full Power Rating Temperature25°C
Junction Temperature Tj Max150°C
Junction Temperature Tj Min-55°C
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Pulse Current Idm6A
SMD Marking028
Termination TypeSurface Mount Device
Voltage Vds20V
Voltage Vds Typ20V
Voltage Vgs Max12V
Voltage Vgs Rds on Measurement4.5V
Voltage Vgs th Max1.5V
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