• FDMA1032CZ
  • FDMA1032CZ
  • FDMA1032CZ
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This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications.

polarityN-Channel, P-Channel
input_capacitance340 pF
voltage_rating_dc20.0 V
breakdown_voltage_gate_to_source-12.0 V to 12.0 V
id_continuous_drain_current3.70 A
breakdown_voltage_drain_to_source20.0 V
vds_drain_to_source_voltage20.0 V
current_rating3.70 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape & Reel (TR)
rds_drain_to_source_resistance_on37.0 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count6
power_dissipation1.40 W
Transistor PolarityN and P Channel
Continuous Drain Current Id3.7A
Drain Source Voltage Vds20V
On Resistance Rds(on)0.037ohm
Rds(on) Test Voltage Vgs1V
Threshold Voltage Vgs12V
Power Dissipation Pd1.4W
Transistor Case StyleµFET
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Jul-2017)
Operating Temperature Min-55°C
PackagingTape & Reel
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