FDMC2523P Купить в Москве

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These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

polarity	P-Channel
input_capacitance	270 pF
voltage_rating_dc	-150 V
breakdown_voltage_gate_to_source	-30.0 V to 30.0 V
id_continuous_drain_current	3.00 A
gate_charge	9.00 nC
power_dissipation	42.0 W
vds_drain_to_source_voltage	150 V
current_rating	-3.00 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Cut Tape (CT)
rds_drain_to_source_resistance_on	1.10 Ω
rohs_status	Compliant
pin_count	8
Transistor Polarity	P Channel
Continuous Drain Current Id	3A
Drain Source Voltage Vds	-150V
On Resistance Rds(on)	1.5ohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	3.8V
Power Dissipation Pd	42W
Transistor Case Style	Power 33
No. of Pins	8Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Capacitance Ciss Typ	200pF
Current Id Max	3A
On State Resistance Max	1.5ohm
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Packaging	Cut Tape
Pin Configuration	D(5,6,7,8), G(4), S(1,2,3)
Pulse Current Idm	12A
Termination Type	Surface Mount Device
Voltage Vds Typ	-150V
Voltage Vgs Max	30V
Voltage Vgs Rds on Measurement	-10V
Voltage Vgs th Max	-5V
Voltage Vgs th Min	-3V