• FDMC2523P
  • FDMC2523P
  • FDMC2523P
  • FDMC2523P
  • FDMC2523P
  • FDMC2523P
Срок поставки и цена – по запросу

These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

polarityP-Channel
input_capacitance270 pF
voltage_rating_dc-150 V
breakdown_voltage_gate_to_source-30.0 V to 30.0 V
id_continuous_drain_current3.00 A
gate_charge9.00 nC
power_dissipation42.0 W
vds_drain_to_source_voltage150 V
current_rating-3.00 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
rds_drain_to_source_resistance_on1.10 Ω
rohs_statusCompliant
pin_count8
Transistor PolarityP Channel
Continuous Drain Current Id3A
Drain Source Voltage Vds-150V
On Resistance Rds(on)1.5ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs3.8V
Power Dissipation Pd42W
Transistor Case StylePower 33
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Capacitance Ciss Typ200pF
Current Id Max3A
On State Resistance Max1.5ohm
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Pin ConfigurationD(5,6,7,8), G(4), S(1,2,3)
Pulse Current Idm12A
Termination TypeSurface Mount Device
Voltage Vds Typ-150V
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement-10V
Voltage Vgs th Max-5V
Voltage Vgs th Min-3V
Показать остальные свойства..

Аналоги