• FDN306P
  • FDN306P
  • FDN306P
  • FDN306P
  • FDN306P
  • FDN306P
  • FDN306P
  • FDN306P
  • FDN306P
  • FDN306P
  • FDN306P
  • FDN306P
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This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Количество в упаковке3000
КорпусSOT3
Вес0.041 г
polarityP-Channel
input_capacitance454 pF
voltage_rating_dc-12.0 V
breakdown_voltage_gate_to_source-8.00 V to 8.00 V
id_continuous_drain_current2.60 A
gate_charge12.0 nC
lead_free_statusLead Free
vds_drain_to_source_voltage12.0 V
current_rating-2.60 A
rise_time10.0 ns
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape & Reel (TR), Cut Tape (CT)
rds_drain_to_source_resistance_on40.0 mΩ
rohs_statusCompliant
pin_count3
power_dissipation500 mW
Transistor PolarityP Channel
Continuous Drain Current Id-2.6A
Drain Source Voltage Vds-12V
On Resistance Rds(on)40mohm
Rds(on) Test Voltage Vgs-4.5V
Threshold Voltage Vgs-600mV
Power Dissipation Pd500mW
Transistor Case StyleSuperSOT
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Current Id Max-2.6A
Termination TypeSurface Mount Device
Voltage Vds Typ-12V
Voltage Vgs Max-600mV
Voltage Vgs Rds on Measurement-4.5V
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