• FDN336P
  • FDN336P
  • FDN336P
  • FDN336P
  • FDN336P
  • FDN336P
  • FDN336P
  • FDN336P
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Цена – по запросу
итого  цена по запросу

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.

polarityP-Channel
input_capacitance330 pF
voltage_rating_dc-20.0 V
breakdown_voltage_gate_to_source-8.00 V to 8.00 V
id_continuous_drain_current1.20 A
gate_charge3.60 nC
lead_free_statusLead Free
vds_drain_to_source_voltage20.0 V
current_rating-1.30 A
rise_time12.0 ns
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape & Reel (TR), Cut Tape (CT)
rds_drain_to_source_resistance_on270 mΩ
rohs_statusCompliant
pin_count3
power_dissipation500 mW
Transistor PolarityP Channel
Continuous Drain Current Id-1.3A
Drain Source Voltage Vds-20V
On Resistance Rds(on)0.122ohm
Rds(on) Test Voltage Vgs-4.5V
Threshold Voltage Vgs-900mV
Power Dissipation Pd500mW
Transistor Case StyleSuperSOT
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
PackagingCut Tape
Current Id Max1.2A
Operating Temperature Range-55°C to +150°C
Termination TypeSurface Mount Device
Voltage Vds Typ-20V
Voltage Vgs Max-900mV
Voltage Vgs Rds on Measurement-4.5V
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