• FDN352AP
  • FDN352AP
  • FDN352AP
  • FDN352AP
  • FDN352AP
  • FDN352AP
  • FDN352AP
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This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.

polarityP-Channel
input_capacitance150 pF
voltage_rating_dc-30.0 V
breakdown_voltage_gate_to_source-25.0 V to 25.0 V
id_continuous_drain_current-1.30 A
gate_charge1.40 nC
lead_free_statusLead Free
vds_drain_to_source_voltage-30.0 V
current_rating-1.30 A
rise_time15.0 ns
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
rds_drain_to_source_resistance_on180 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation500 mW
Transistor PolarityP Channel
Continuous Drain Current Id-1.3A
Drain Source Voltage Vds-30V
On Resistance Rds(on)180mohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs-2V
Power Dissipation Pd500mW
Transistor Case StyleSuperSOT
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max-1.3A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Termination TypeSurface Mount Device
Voltage Vds Typ-30V
Voltage Vgs Max25V
Voltage Vgs Rds on Measurement-10V
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