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This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

polarity	N-Channel
input_capacitance	480 pF
voltage_rating_dc	30.0 V
breakdown_voltage_gate_to_source	-20.0 V to 20.0 V
id_continuous_drain_current	2.70 A
gate_charge	5.00 nC
breakdown_voltage_drain_to_source	30.0 V
vds_drain_to_source_voltage	30.0 V
current_rating	2.70 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Cut Tape (CT)
case_package	SSOT
rds_drain_to_source_resistance_on	46.0 mΩ
rise_time	13.0 ns
lifecycle_status	Active
rohs_status	Compliant
pin_count	3
power_dissipation	500 mW
Transistor Polarity	N Channel
Continuous Drain Current Id	2.7A
Drain Source Voltage Vds	30V
On Resistance Rds(on)	46mohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	1.6V
Power Dissipation Pd	500mW
Transistor Case Style	SOT-23
No. of Pins	3Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Current Id Max	2.7A
Current Temperature	25°C
Device Marking	FDN359AN
External Depth	2.5mm
External Length / Height	1.12mm
External Width	3.05mm
Full Power Rating Temperature	25°C
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Packaging	Cut Tape
Pulse Current Idm	15A
SMD Marking	359A
Tape Width	8mm
Voltage Vds	30V
Voltage Vds Typ	30V
Voltage Vgs Max	1.6V
Voltage Vgs Rds on Measurement	10V
Voltage Vgs th Max	3V