• FDN359AN
  • FDN359AN
  • FDN359AN
  • FDN359AN
  • FDN359AN
  • FDN359AN
  • FDN359AN
  • FDN359AN
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This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

polarityN-Channel
input_capacitance480 pF
voltage_rating_dc30.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current2.70 A
gate_charge5.00 nC
breakdown_voltage_drain_to_source30.0 V
vds_drain_to_source_voltage30.0 V
current_rating2.70 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSSOT
rds_drain_to_source_resistance_on46.0 mΩ
rise_time13.0 ns
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation500 mW
Transistor PolarityN Channel
Continuous Drain Current Id2.7A
Drain Source Voltage Vds30V
On Resistance Rds(on)46mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs1.6V
Power Dissipation Pd500mW
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max2.7A
Current Temperature25°C
Device MarkingFDN359AN
External Depth2.5mm
External Length / Height1.12mm
External Width3.05mm
Full Power Rating Temperature25°C
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Pulse Current Idm15A
SMD Marking359A
Tape Width8mm
Voltage Vds30V
Voltage Vds Typ30V
Voltage Vgs Max1.6V
Voltage Vgs Rds on Measurement10V
Voltage Vgs th Max3V
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