• FDS4435BZ
  • FDS4435BZ
  • FDS4435BZ
  • FDS4435BZ
  • FDS4435BZ
  • FDS4435BZ
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This P–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Количество в упаковке1
Вес0.232 г
polarityP-Channel
input_capacitance1.36 nF
voltage_rating_dc-30.0 V
breakdown_voltage_gate_to_source-25.0 V to 25.0 V
id_continuous_drain_current-8.80 A
gate_charge41.0 nC
power_dissipation2.50 W
vds_drain_to_source_voltage-30.0 V
current_rating-8.80 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingReel
case_packageSOIC
rds_drain_to_source_resistance_on16.0 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count8
Transistor PolarityP Channel
Continuous Drain Current Id-8.8A
Drain Source Voltage Vds-30V
On Resistance Rds(on)0.016ohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs-2.1V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max-8.8A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Termination TypeSurface Mount Device
Transistor TypeTrench
Voltage Vds Typ-30V
Voltage Vgs Max-2.1V
Voltage Vgs Rds on Measurement-10V
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