• FDS4935BZ
  • FDS4935BZ
  • FDS4935BZ
  • FDS4935BZ
  • FDS4935BZ
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This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

polarityP-Channel
input_capacitance1.36 nF
voltage_rating_dc-30.0 V
breakdown_voltage_gate_to_source-25.0 V to 25.0 V
id_continuous_drain_current-6.90 A
gate_charge40.0 nC
power_dissipation1.60 W
vds_drain_to_source_voltage-30.0 V
current_rating-6.90 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape & Reel (TR), Cut Tape (CT)
case_packageSOIC
rds_drain_to_source_resistance_on18.0 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count8
Transistor PolarityDual P Channel
Continuous Drain Current Id6.9A
Drain Source Voltage Vds-30V
On Resistance Rds(on)22mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs1.9V
Power Dissipation Pd1.6W
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
PackagingCut Tape
Capacitance Ciss Typ1360pF
Continuous Drain Current Id, P Channel-6.9A
Current Id Max-6.9A
Drain Source Voltage Vds, P Channel-30V
Module ConfigurationDual
On Resistance Rds(on), P Channel0.018ohm
On State Resistance Max22mohm
Operating Temperature Range-55°C to +150°C
Pin ConfigurationD1(5,6), D2(7,8), G1(4), S1(3), G2(2), S2(1)
Pulse Current Idm50A
Termination TypeSurface Mount Device
Voltage Vds Typ-30V
Voltage Vgs Max25V
Voltage Vgs Rds on Measurement-10V
Voltage Vgs th Max-3V
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