FDS4935BZ Купить в Москве

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This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

polarity	P-Channel
input_capacitance	1.36 nF
voltage_rating_dc	-30.0 V
breakdown_voltage_gate_to_source	-25.0 V to 25.0 V
id_continuous_drain_current	-6.90 A
gate_charge	40.0 nC
power_dissipation	1.60 W
vds_drain_to_source_voltage	-30.0 V
current_rating	-6.90 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Tape & Reel (TR), Cut Tape (CT)
case_package	SOIC
rds_drain_to_source_resistance_on	18.0 mΩ
lifecycle_status	Active
rohs_status	Compliant
pin_count	8
Transistor Polarity	Dual P Channel
Continuous Drain Current Id	6.9A
Drain Source Voltage Vds	-30V
On Resistance Rds(on)	22mohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	1.9V
Power Dissipation Pd	1.6W
Transistor Case Style	SOIC
No. of Pins	8Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Operating Temperature Min	-55°C
Packaging	Cut Tape
Capacitance Ciss Typ	1360pF
Continuous Drain Current Id, P Channel	-6.9A
Current Id Max	-6.9A
Drain Source Voltage Vds, P Channel	-30V
Module Configuration	Dual
On Resistance Rds(on), P Channel	0.018ohm
On State Resistance Max	22mohm
Operating Temperature Range	-55°C to +150°C
Pin Configuration	D1(5,6), D2(7,8), G1(4), S1(3), G2(2), S2(1)
Pulse Current Idm	50A
Termination Type	Surface Mount Device
Voltage Vds Typ	-30V
Voltage Vgs Max	25V
Voltage Vgs Rds on Measurement	-10V
Voltage Vgs th Max	-3V