• FDS6679AZ
  • FDS6679AZ
  • FDS6679AZ
  • FDS6679AZ
  • FDS6679AZ
  • FDS6679AZ
  • FDS6679AZ
  • FDS6679AZ
  • FDS6679AZ
Срок: 5 дней
Склад: 500 штук
74,21 ₽
от 1 шт.
60,54 ₽
от 5 шт.
58,21 ₽
от 10 шт.
55,88 ₽
от 20 шт.
итого  74,21 ₽

This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Количество в упаковке1
КорпусSOIC-8
Вес0.226 г
polarityP-Channel
input_capacitance3.84 nF
voltage_rating_dc-30.0 V
id_continuous_drain_current-13.0 A
gate_charge96.0 nC
power_dissipation2.50 W
vds_drain_to_source_voltage-30.0 V
current_rating-13.0 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape & Reel (TR), Cut Tape (CT)
case_packageSOIC
lifecycle_statusActive
rohs_statusCompliant
pin_count8
Transistor PolarityP Channel
Continuous Drain Current Id-13A
Drain Source Voltage Vds-30V
On Resistance Rds(on)0.0077ohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs-1.9V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
PackagingCut Tape
Current Id Max-13A
Operating Temperature Range-55°C to +150°C
Termination TypeSurface Mount Device
Voltage Vds Typ-30V
Voltage Vgs Max+25V
Voltage Vgs Off Min-25V
Voltage Vgs Rds on Measurement-10V
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