• FDS6680A
  • FDS6680A
  • FDS6680A
  • FDS6680A
  • FDS6680A
  • FDS6680A
  • FDS6680A
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This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Количество в упаковке2500
КорпусSO8-150-1.27
Вес0.243 г
polarityN-Channel
voltage_rating_dc30.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current12.5 A
breakdown_voltage_drain_to_source30.0 V
vds_drain_to_source_voltage30.0 V
current_rating12.5 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOIC
rds_drain_to_source_resistance_on9.50 mΩ
rohs_statusCompliant
pin_count8
power_dissipation2.50 W
Transistor PolarityN Channel
Continuous Drain Current Id12.5A
Drain Source Voltage Vds30V
On Resistance Rds(on)9.5mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs2V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max12.5A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Pulse Current Idm50A
SMD MarkingFDS6680A
Termination TypeSurface Mount Device
Voltage Vds30V
Voltage Vds Typ30V
Voltage Vgs Max2V
Voltage Vgs Rds on Measurement10V
Voltage Vgs th Min1V
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