• FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
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This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

polarityP-Channel
input_capacitance7.54 nF
voltage_rating_dc-30.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current-20.0 A
gate_charge185 nC
lead_free_statusLead Free
vds_drain_to_source_voltage-30.0 V
current_rating-20.0 A
rise_time9.00 ns
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOIC
rds_drain_to_source_resistance_on3.80 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count8
power_dissipation2.50 W
Transistor PolarityP Channel
Continuous Drain Current Id20A
Drain Source Voltage Vds-30V
On Resistance Rds(on)0.0038ohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs1.8V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max-20A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Termination TypeSurface Mount Device
Voltage Vds Typ30V
Voltage Vgs Max-1.8V
Voltage Vgs Rds on Measurement10V
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