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MOSFET, DUAL, NP, SMD, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:4.1A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
| Вес | 1.0e-06 кг |
| Количество в упаковке | 1 |
| Transistor Polarity | N and P Channel |
| Continuous Drain Current Id | 4.1A |
| Drain Source Voltage Vds | 30V |
| On Resistance Rds(on) | 80mohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs | 1.7V |
| Power Dissipation Pd | 2W |
| Transistor Case Style | SOIC |
| No. of Pins | 8 |
| Operating Temperature Max | 150°C |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (17-Dec-2014) |
| Current Id Max | 4.1A |
| Operating Temperature Min | -55°C |
| Operating Temperature Range | -55°C to +150°C |
| Packaging | Cut Tape |
| Termination Type | SMD |
| Voltage Vds Typ | 30V |
| Voltage Vgs Max | 20V |
| Voltage Vgs Rds on Measurement | 10V |
| polarity | N-Channel, P-Channel |
| input_capacitance | 185 pF |
| current_rating | 4.10 A |
| id_continuous_drain_current | 3.40 A |
| gate_charge | 4.10 nC |
| breakdown_voltage_drain_to_source | -30.0 V to 30.0 V |
| vds_drain_to_source_voltage | 30.0 V |
| reach_svhc_compliance | No SVHC |
| lead_free_status | Lead Free |
| mounting_style | Surface Mount |
| packaging | Tape |
| case_package | SOIC |
| rds_drain_to_source_resistance_on | 80.0 mΩ |
| rise_time | 13.0 ns |
| lifecycle_status | Obsolete |
| rohs_status | Compliant |
| pin_count | 8 |
| power_dissipation | 2.00 W |
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