FDS8858CZ Купить в Москве

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These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Transistor Polarity	N and P Channel
Continuous Drain Current Id	8.6A
Drain Source Voltage Vds	30V
On Resistance Rds(on)	17mohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	1.6V
Power Dissipation Pd	2W
Transistor Case Style	SOIC
No. of Pins	8Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Cont Current Id N Channel 2	8.6A
Cont Current Id P Channel	7.3A
Current Id Max	8.6A
No. of Transistors	2
On State Resistance N Channel Max	17mohm
On State Resistance P Channel Max	20.5mohm
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Packaging	Cut Tape
Pulse Current Idm N Channel 2	20A
Pulse Current Idm P Channel	20A
Termination Type	Surface Mount Device
Voltage Vds Typ	30V
Voltage Vgs Max	1.6V
Voltage Vgs Rds on Measurement	10V
polarity	N-Channel, P-Channel
id_continuous_drain_current	8.60 A
power_dissipation	2.00 W
vds_drain_to_source_voltage	30.0 V
reach_svhc_compliance	No SVHC
lead_free_status	Lead Free
mounting_style	Surface Mount
packaging	Cut Tape (CT)
case_package	SO
rds_drain_to_source_resistance_on	17.0 mΩ, 20.5 mΩ
lifecycle_status	Active
rohs_status	Compliant
pin_count	8