Срок доставки – по запросу | Цена – по запросу |
These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
| Transistor Polarity | N and P Channel |
| Continuous Drain Current Id | 8.6A |
| Drain Source Voltage Vds | 30V |
| On Resistance Rds(on) | 17mohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs | 1.6V |
| Power Dissipation Pd | 2W |
| Transistor Case Style | SOIC |
| No. of Pins | 8Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (15-Jun-2015) |
| Cont Current Id N Channel 2 | 8.6A |
| Cont Current Id P Channel | 7.3A |
| Current Id Max | 8.6A |
| No. of Transistors | 2 |
| On State Resistance N Channel Max | 17mohm |
| On State Resistance P Channel Max | 20.5mohm |
| Operating Temperature Min | -55°C |
| Operating Temperature Range | -55°C to +150°C |
| Packaging | Cut Tape |
| Pulse Current Idm N Channel 2 | 20A |
| Pulse Current Idm P Channel | 20A |
| Termination Type | Surface Mount Device |
| Voltage Vds Typ | 30V |
| Voltage Vgs Max | 1.6V |
| Voltage Vgs Rds on Measurement | 10V |
| polarity | N-Channel, P-Channel |
| id_continuous_drain_current | 8.60 A |
| power_dissipation | 2.00 W |
| vds_drain_to_source_voltage | 30.0 V |
| reach_svhc_compliance | No SVHC |
| lead_free_status | Lead Free |
| mounting_style | Surface Mount |
| packaging | Cut Tape (CT) |
| case_package | SO |
| rds_drain_to_source_resistance_on | 17.0 mΩ, 20.5 mΩ |
| lifecycle_status | Active |
| rohs_status | Compliant |
| pin_count | 8 |
Аналоги
