FDS8880 Купить в Москве

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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

polarity	N-Channel
input_capacitance	1.23 nF
voltage_rating_dc	30.0 V
breakdown_voltage_gate_to_source	-20.0 V to 20.0 V
id_continuous_drain_current	11.6 A
gate_charge	23.0 nC
breakdown_voltage_drain_to_source	30.0 V
vds_drain_to_source_voltage	30.0 V
current_rating	11.6 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Tape
case_package	SOIC
rds_drain_to_source_resistance_on	10.0 mΩ
rise_time	27.0 ns
rohs_status	Compliant
pin_count	8
power_dissipation	2.50 W
Transistor Polarity	N Channel
Continuous Drain Current Id	11.6A
Drain Source Voltage Vds	30V
On Resistance Rds(on)	0.0079ohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	2.5V
Power Dissipation Pd	2.5W
Transistor Case Style	SOIC
No. of Pins	8Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Current Id Max	11.6A
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Termination Type	Surface Mount Device
Voltage Vds Typ	30V
Voltage Vgs Max	2.5V
Voltage Vgs Rds on Measurement	10V