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These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| polarity | N-Channel, P-Channel |
| input_capacitance | 1.13 nF |
| current_rating | 5.50 A |
| breakdown_voltage_gate_to_source | -8.00 V to 8.00 V |
| id_continuous_drain_current | 5.50 A |
| gate_charge | 20.0 nC |
| breakdown_voltage_drain_to_source | 30.0 V |
| vds_drain_to_source_voltage | 30.0 V |
| reach_svhc_compliance | No SVHC |
| lead_free_status | Lead Free |
| mounting_style | Surface Mount |
| packaging | Cut Tape (CT) |
| case_package | SOIC |
| rds_drain_to_source_resistance_on | 30.0 mΩ, 72.0 mΩ |
| rise_time | 23.0 ns |
| lifecycle_status | Active |
| rohs_status | Compliant |
| pin_count | 8 |
| power_dissipation | 2.00 W |
| Transistor Polarity | N and P Channel |
| Continuous Drain Current Id | 5.5A |
| Drain Source Voltage Vds | 30V |
| On Resistance Rds(on) | 0.025ohm |
| Rds(on) Test Voltage Vgs | 4.5V |
| Threshold Voltage Vgs | 670mV |
| Power Dissipation Pd | 2W |
| Transistor Case Style | SOIC |
| No. of Pins | 8Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (15-Jun-2015) |
| Current Id Max | 5.5A |
| Operating Temperature Min | -55°C |
| Operating Temperature Range | -55°C to +150°C |
| Packaging | Cut Tape |
| Termination Type | Surface Mount Device |
| Voltage Vds Typ | 30V |
| Voltage Vgs Max | 670mV |
| Voltage Vgs Rds on Measurement | 4.5V |
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