• FDT434P
  • FDT434P
  • FDT434P
  • FDT434P
  • FDT434P
  • FDT434P
  • FDT434P
  • FDT434P
  • FDT434P
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This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Количество в упаковке1
КорпусSOT-223
Вес0.222 г
polarityP-Channel
input_capacitance1.19 nF
voltage_rating_dc-20.0 V
breakdown_voltage_gate_to_source-8.00 V to 8.00 V
id_continuous_drain_current6.00 A
gate_charge13.0 nC
breakdown_voltage_drain_to_source12.0 V
vds_drain_to_source_voltage-20.0 V
current_rating-5.50 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOT-223
rds_drain_to_source_resistance_on50.0 mΩ
rise_time15.0 ns
lifecycle_statusActive
rohs_statusCompliant
pin_count4
power_dissipation3.00 W
Transistor PolarityP Channel
Continuous Drain Current Id6A
Drain Source Voltage Vds-20V
On Resistance Rds(on)0.04ohm
Rds(on) Test Voltage Vgs-4.5V
Threshold Voltage Vgs-600mV
Power Dissipation Pd3W
Transistor Case StyleSOT-223
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max6A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Termination TypeSurface Mount Device
Voltage Vds Typ20V
Voltage Vgs Max-600mV
Voltage Vgs Rds on Measurement-4.5V
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