• FDV303N
  • FDV303N
  • FDV303N
  • FDV303N
  • FDV303N
  • FDV303N
  • FDV303N
  • FDV303N
  • FDV303N
  • FDV303N
  • FDV303N
  • FDV303N
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These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Количество в упаковке3000
КорпусSOT23
Вес0.036 г
polarityN-Channel
voltage_rating_dc25.0 V
breakdown_voltage_gate_to_source8.00 V
id_continuous_drain_current680 mA
breakdown_voltage_drain_to_source25.0 V
vds_drain_to_source_voltage25.0 V
current_rating680 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT), Tape & Reel (TR)
case_packageSOT-23
rds_drain_to_source_resistance_on450 mΩ
rohs_statusCompliant
pin_count3
power_dissipation350 mW
Transistor PolarityN Channel
Continuous Drain Current Id680mA
Drain Source Voltage Vds25V
On Resistance Rds(on)0.33ohm
Rds(on) Test Voltage Vgs4.5V
Threshold Voltage Vgs800mV
Power Dissipation Pd350mW
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
PackagingCut Tape
Current Id Max680mA
Current Temperature25°C
ESD HBM6kV
External Depth2.5mm
External Length / Height1.12mm
External Width3.05mm
Full Power Rating Temperature25°C
No. of Transistors1
Operating Temperature Range-55°C to +150°C
Pulse Current Idm2A
SMD Marking303
Tape Width8mm
Voltage Vds Typ25V
Voltage Vgs Max800mV
Voltage Vgs Rds on Measurement4.5V
Voltage Vgs th Max1.5V
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