• FDV304P
  • FDV304P
  • FDV304P
  • FDV304P
  • FDV304P
  • FDV304P
  • FDV304P
  • FDV304P
  • FDV304P
  • FDV304P
  • FDV304P
  • FDV304P
  • FDV304P
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This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Количество в упаковке3000
КорпусSOT23-3
Вес0.032 г
polarityP-Channel
voltage_rating_dc-25.0 V
id_continuous_drain_current460 mA
breakdown_voltage_drain_to_source-25.0 V
vds_drain_to_source_voltage-25.0 V
current_rating-460 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOT-23
rds_drain_to_source_resistance_on1.10 Ω
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation350 mW
Transistor PolarityP Channel
Continuous Drain Current Id-460mA
Drain Source Voltage Vds-25V
On Resistance Rds(on)1.22ohm
Rds(on) Test Voltage Vgs2.7V
Threshold Voltage Vgs-860mV
Power Dissipation Pd350mW
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Temperature25°C
ESD HBM6kV
External Depth2.5mm
External Length / Height1.12mm
External Width3.05mm
Full Power Rating Temperature25°C
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Pulse Current Idm500mA
SMD Marking304P
Tape Width8mm
Voltage Vds Typ-25V
Voltage Vgs Max-860mV
Voltage Vgs Rds on Measurement-4.5V
Voltage Vgs th Max-1.5V
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