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This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V.
| rohs_status | Compliant |
| lead_free_status | Lead Free |
| mounting_style | Surface Mount |
| lifecycle_status | Active |
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 600mA |
| Drain Source Voltage Vds | 20V |
| On Resistance Rds(on) | 0.24ohm |
| Rds(on) Test Voltage Vgs | 4.5V |
| Threshold Voltage Vgs | 1V |
| Power Dissipation Pd | 625mW |
| Transistor Case Style | SOT-523 |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | SuperFET III Series |
| Automotive Qualification Standard | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (12-Jan-2017) |
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