• FF200R12KT4HOSA1
  • FF200R12KT4HOSA1
Срок доставки – по запросу
8 720,03 ₽
от 1 шт.
итого  8 720,03 ₽

Our well-known 62 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and optimized Emitter Controlled Diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

Количество в упаковке10
Вес306.4 г
Transistor PolarityDual NPN
DC Collector Current320A
Collector Emitter Saturation Voltage Vce(on)1.75V
Power Dissipation Pd1.1kW
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
No. of Pins7Pins
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (12-Jan-2017)
MSLMSL 1 - Unlimited
Operating Temperature Min-40°C
polarityNPN
rohs_statusCompliant
lead_free_statusLead Free
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