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The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
Количество в упаковке | 100 |
Вес | 0.399 г |
case_package | PDIP |
rohs_status | Compliant |
lead_free_status | Lead Free |
mounting_style | Through Hole |
isolation_voltage | 5.00 kV |
packaging | Bulk |
input_voltage_dc | 7.00 V (max) |
number_of_circuits | 1 |
input_current | 50.0 mA |
lifecycle_status | Active |
output_voltage | 70.0 V (max) |
pin_count | 4 |