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The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
| Количество в упаковке | 100 |
| Корпус | DIP4-300-2.54 |
| Вес | 0.4 г |
| case_package | DIP |
| lead_free_status | Lead Free |
| rise_time | 4.00 µs |
| mounting_style | Through Hole |
| isolation_voltage | 5.00 kV |
| packaging | Bulk |
| input_voltage_dc | 1.20 V |
| number_of_circuits | 1 |
| input_current | 50.0 mA |
| lifecycle_status | Active |
| output_voltage | 70.0 V (max) |
| rohs_status | Compliant |
| pin_count | 4 |
| number_of_channels | 1 |
| No. of Channels | 1 Channel |
| Optocoupler Case Style | DIP |
| No. of Pins | 4Pins |
| Forward Current If Max | 50mA |
| Isolation Voltage | 5kV |
| CTR Min | 80% |
| Collector Emitter Voltage V(br)ceo | 70V |
| Packaging | Each |
| Product Range | FOD817 Series |
| SVHC | No SVHC (07-Jul-2017) |
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