FOD817B Купить в Москве

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The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Количество в упаковке	100
Корпус	DIP4-300-2.54
Вес	0.412 г
case_package	DIP
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
rise_time	18.0 µs
mounting_style	Through Hole
isolation_voltage	5.00 kV
packaging	Bulk
input_voltage_dc	1.20 V
number_of_circuits	1
input_current	20.0 mA
lifecycle_status	Active
output_voltage	70.0 V
rohs_status	Compliant
pin_count	4
number_of_channels	1
No. of Channels	1Channels
Optocoupler Case Style	DIP
No. of Pins	4Pins
Forward Current If Max	50mA
Isolation Voltage	5kV
CTR Min	130%
Collector Emitter Voltage V(br)ceo	70V
Packaging	Each
Product Range	-
SVHC	No SVHC (15-Jun-2015)
Approval Bodies	cUL, UL, VDE
Breakover Voltage Min	70V
Current Transfer Ratio Max	260%
Current Transfer Ratio Min	130%
Fall Time tf	18000ns
Input Current	20mA
Operating Temperature Max	110°C
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +110°C
Optocoupler Output Type	Phototransistor
Output Voltage	70V
Output Voltage Max	6V
Rise Time	18µs