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The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
| Количество в упаковке | 100 |
| Корпус | DIP4-300-2.54 |
| Вес | 0.412 г |
| case_package | DIP |
| lead_free_status | Lead Free |
| reach_svhc_compliance | No SVHC |
| rise_time | 18.0 µs |
| mounting_style | Through Hole |
| isolation_voltage | 5.00 kV |
| packaging | Bulk |
| input_voltage_dc | 1.20 V |
| number_of_circuits | 1 |
| input_current | 20.0 mA |
| lifecycle_status | Active |
| output_voltage | 70.0 V |
| rohs_status | Compliant |
| pin_count | 4 |
| number_of_channels | 1 |
| No. of Channels | 1Channels |
| Optocoupler Case Style | DIP |
| No. of Pins | 4Pins |
| Forward Current If Max | 50mA |
| Isolation Voltage | 5kV |
| CTR Min | 130% |
| Collector Emitter Voltage V(br)ceo | 70V |
| Packaging | Each |
| Product Range | - |
| SVHC | No SVHC (15-Jun-2015) |
| Approval Bodies | cUL, UL, VDE |
| Breakover Voltage Min | 70V |
| Current Transfer Ratio Max | 260% |
| Current Transfer Ratio Min | 130% |
| Fall Time tf | 18000ns |
| Input Current | 20mA |
| Operating Temperature Max | 110°C |
| Operating Temperature Min | -55°C |
| Operating Temperature Range | -55°C to +110°C |
| Optocoupler Output Type | Phototransistor |
| Output Voltage | 70V |
| Output Voltage Max | 6V |
| Rise Time | 18µs |
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