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The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
| Количество в упаковке | 1000 |
| Корпус | SO4-300-2.54 |
| Вес | 0.533 г |
| case_package | DIP |
| lead_free_status | Lead Free |
| reach_svhc_compliance | No SVHC |
| rise_time | 4.00 µs |
| mounting_style | Surface Mount |
| isolation_voltage | 5.00 kV |
| packaging | Cut Tape (CT) |
| input_voltage_dc | 1.20 V |
| number_of_circuits | 1 |
| input_current | 50.0 mA |
| lifecycle_status | Active |
| output_voltage | 70.0 V |
| rohs_status | Compliant |
| pin_count | 4 |
| number_of_channels | 1 |
| No. of Channels | 1Channels |
| Optocoupler Case Style | Surface Mount DIP |
| No. of Pins | 4Pins |
| Forward Current If Max | 50mA |
| Isolation Voltage | 5kV |
| CTR Min | 200% |
| Packaging | Cut Tape |
| Product Range | - |
| SVHC | No SVHC (15-Jun-2015) |
| MSL | MSL 1 - Unlimited |
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