• FOD817D
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The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

case_packageDIP
lead_free_statusLead Free
rise_time4.00 µs
mounting_styleThrough Hole
isolation_voltage5.00 kV
packagingBulk
input_voltage_dc1.20 V
number_of_circuits1
input_current50.0 mA
lifecycle_statusActive
output_voltage70.0 V (max)
rohs_statusCompliant
pin_count4
number_of_channels1
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