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The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
| case_package | DIP |
| lead_free_status | Lead Free |
| rise_time | 4.00 µs |
| mounting_style | Through Hole |
| isolation_voltage | 5.00 kV |
| packaging | Bulk |
| input_voltage_dc | 1.20 V |
| number_of_circuits | 1 |
| input_current | 50.0 mA |
| lifecycle_status | Active |
| output_voltage | 70.0 V (max) |
| rohs_status | Compliant |
| pin_count | 4 |
| number_of_channels | 1 |
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