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The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
case_package | DIP |
lead_free_status | Lead Free |
reach_svhc_compliance | No SVHC |
rise_time | 4.00 µs |
mounting_style | Surface Mount |
isolation_voltage | 5.00 kV |
packaging | Cut Tape (CT) |
input_voltage_dc | 1.20 V |
number_of_circuits | 1 |
input_current | 50.0 mA |
lifecycle_status | Active |
output_voltage | 70.0 V (max) |
rohs_status | Compliant |
pin_count | 4 |
number_of_channels | 1 |
No. of Channels | 1Channels |
Optocoupler Case Style | Surface Mount DIP |
No. of Pins | 4Pins |
Forward Current If Max | 50mA |
Isolation Voltage | 5kV |
CTR Min | 300% |
Packaging | Each |
Product Range | - |
SVHC | No SVHC (15-Jun-2015) |
MSL | MSL 1 - Unlimited |
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