FQA24N60 Купить в Москве

Срок поставки и цена – по запросу

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

polarity	N-Channel
voltage_rating_dc	600 V
breakdown_voltage_gate_to_source	-30.0 V to 30.0 V
id_continuous_drain_current	23.5 A
breakdown_voltage_drain_to_source	600 V
vds_drain_to_source_voltage	600 V
current_rating	23.5 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Through Hole
packaging	Tube
rds_drain_to_source_resistance_on	240 mΩ
rohs_status	Compliant
pin_count	3
power_dissipation	310 W
Transistor Polarity	N Channel
Continuous Drain Current Id	23.5A
Drain Source Voltage Vds	600V
On Resistance Rds(on)	240mohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	5V
Power Dissipation Pd	310W
Transistor Case Style	TO-3P
No. of Pins	3Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	-
SVHC	No SVHC (15-Jun-2015)
Current Id Max	23.5A
Junction Temperature Tj Max	150°C
Junction Temperature Tj Min	-55°C
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Pulse Current Idm	94A
Voltage Vds Typ	600V
Voltage Vgs Max	30V
Voltage Vgs Rds on Measurement	10V