• FQA24N60
  • FQA24N60
  • FQA24N60
  • FQA24N60
  • FQA24N60
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

polarityN-Channel
voltage_rating_dc600 V
breakdown_voltage_gate_to_source-30.0 V to 30.0 V
id_continuous_drain_current23.5 A
breakdown_voltage_drain_to_source600 V
vds_drain_to_source_voltage600 V
current_rating23.5 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTube
rds_drain_to_source_resistance_on240 mΩ
rohs_statusCompliant
pin_count3
power_dissipation310 W
Transistor PolarityN Channel
Continuous Drain Current Id23.5A
Drain Source Voltage Vds600V
On Resistance Rds(on)240mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs5V
Power Dissipation Pd310W
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Current Id Max23.5A
Junction Temperature Tj Max150°C
Junction Temperature Tj Min-55°C
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm94A
Voltage Vds Typ600V
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
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