• FQD12N20LTM
  • FQD12N20LTM
  • FQD12N20LTM
  • FQD12N20LTM
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

polarityN-Channel
voltage_rating_dc200 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current9.00 A
breakdown_voltage_drain_to_source200 V
vds_drain_to_source_voltage200 V
current_rating9.00 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape
case_packageTO-252
rds_drain_to_source_resistance_on280 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation2.50 W
Transistor PolarityN Channel
Continuous Drain Current Id9A
Drain Source Voltage Vds200V
On Resistance Rds(on)0.22ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs2V
Power Dissipation Pd55W
Transistor Case StyleTO-252AA
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max9A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Termination TypeSurface Mount Device
Transistor TypeEnhancement
Voltage Vds Typ200V
Voltage Vgs Max2V
Voltage Vgs Rds on Measurement10V
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