FQD12N20LTM Купить в Москве

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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

polarity	N-Channel
voltage_rating_dc	200 V
breakdown_voltage_gate_to_source	-20.0 V to 20.0 V
id_continuous_drain_current	9.00 A
breakdown_voltage_drain_to_source	200 V
vds_drain_to_source_voltage	200 V
current_rating	9.00 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Tape
case_package	TO-252
rds_drain_to_source_resistance_on	280 mΩ
lifecycle_status	Active
rohs_status	Compliant
pin_count	3
power_dissipation	2.50 W
Transistor Polarity	N Channel
Continuous Drain Current Id	9A
Drain Source Voltage Vds	200V
On Resistance Rds(on)	0.22ohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	2V
Power Dissipation Pd	55W
Transistor Case Style	TO-252AA
No. of Pins	3Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Current Id Max	9A
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Termination Type	Surface Mount Device
Transistor Type	Enhancement
Voltage Vds Typ	200V
Voltage Vgs Max	2V
Voltage Vgs Rds on Measurement	10V