• FQD7P20TM
  • FQD7P20TM
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This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

polarityP-Channel
voltage_rating_dc-200 V
breakdown_voltage_gate_to_source-30.0 V to 30.0 V
id_continuous_drain_current5.70 mA
rohs_statusCompliant
vds_drain_to_source_voltage200 V
current_rating-5.70 A
lead_free_statusLead Free
mounting_styleSurface Mount
packagingTape & Reel (TR)
case_packageTO-252
rds_drain_to_source_resistance_on690 mΩ
lifecycle_statusActive
power_dissipation2.50 W
Transistor PolarityP Channel
Continuous Drain Current Id-5.7A
Drain Source Voltage Vds-200V
On Resistance Rds(on)0.54ohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs-5V
Power Dissipation Pd2.5W
Transistor Case StyleTO-252
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
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