• FQP20N06L
  • FQP20N06L
  • FQP20N06L
  • FQP20N06L
  • FQP20N06L
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

polarityN-Channel
voltage_rating_dc60.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current21.0 A
breakdown_voltage_drain_to_source60.0 V
vds_drain_to_source_voltage60.0 V
current_rating21.0 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTube, Rail
case_packageTO-220
rds_drain_to_source_resistance_on42.0 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation53.0 W
Transistor PolarityN Channel
Continuous Drain Current Id21A
Drain Source Voltage Vds60V
On Resistance Rds(on)55mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs2.5V
Power Dissipation Pd53W
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
Termination TypeThrough Hole
Transistor TypeEnhancement
Voltage Vds Typ60V
Voltage Vgs Rds on Measurement10V
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