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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
polarity | N-Channel |
voltage_rating_dc | 60.0 V |
breakdown_voltage_gate_to_source | -20.0 V to 20.0 V |
id_continuous_drain_current | 21.0 A |
breakdown_voltage_drain_to_source | 60.0 V |
vds_drain_to_source_voltage | 60.0 V |
current_rating | 21.0 A |
lead_free_status | Lead Free |
reach_svhc_compliance | No SVHC |
mounting_style | Through Hole |
packaging | Tube, Rail |
case_package | TO-220 |
rds_drain_to_source_resistance_on | 42.0 mΩ |
lifecycle_status | Active |
rohs_status | Compliant |
pin_count | 3 |
power_dissipation | 53.0 W |
Transistor Polarity | N Channel |
Continuous Drain Current Id | 21A |
Drain Source Voltage Vds | 60V |
On Resistance Rds(on) | 55mohm |
Rds(on) Test Voltage Vgs | 10V |
Threshold Voltage Vgs | 2.5V |
Power Dissipation Pd | 53W |
Transistor Case Style | TO-220 |
No. of Pins | 3Pins |
Operating Temperature Max | 175°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | - |
SVHC | No SVHC (15-Jun-2015) |
Operating Temperature Min | -55°C |
Termination Type | Through Hole |
Transistor Type | Enhancement |
Voltage Vds Typ | 60V |
Voltage Vgs Rds on Measurement | 10V |
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