• FQP3N80C
  • FQP3N80C
  • FQP3N80C
  • FQP3N80C
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

polarityN-Channel
voltage_rating_dc800 V
breakdown_voltage_gate_to_source-30.0 V to 30.0 V
id_continuous_drain_current3.00 A
breakdown_voltage_drain_to_source800 V
vds_drain_to_source_voltage800 V
current_rating3.00 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTube
case_packageTO-220
rds_drain_to_source_resistance_on4.80 Ω
rohs_statusCompliant
pin_count3
power_dissipation107 W
Transistor PolarityN Channel
Continuous Drain Current Id3A
Drain Source Voltage Vds800V
On Resistance Rds(on)4ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs5V
Power Dissipation Pd107W
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Current Id Max3A
Current Temperature25°C
External Length / Height4.83mm
External Width10.67mm
Full Power Rating Temperature25°C
No. of Transistors1
On State Resistance Max4.8ohm
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm12A
Termination TypeThrough Hole
Voltage Vds Typ800V
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
Voltage Vgs th Max5V
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