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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

polarityN-Channel
voltage_rating_dc500 V
breakdown_voltage_gate_to_source-30.0 V to 30.0 V
id_continuous_drain_current13.0 A
breakdown_voltage_drain_to_source500 V
vds_drain_to_source_voltage500 V
current_rating13.0 A
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
rds_drain_to_source_resistance_on480 mΩ
lifecycle_statusNot Recommended for New Designs
rohs_statusCompliant
power_dissipation48.0 W
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