• FQPF19N20
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Transistor PolarityN Channel
Continuous Drain Current Id11.8A
Drain Source Voltage Vds200V
On Resistance Rds(on)150mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs5V
Power Dissipation Pd50W
Transistor Case StyleTO-220F
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Current Id Max11.8A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm48A
Voltage Vds Typ200V
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
polarityN-Channel
voltage_rating_dc200 V
breakdown_voltage_gate_to_source-30.0 V to 30.0 V
id_continuous_drain_current11.8 A
breakdown_voltage_drain_to_source200 V
vds_drain_to_source_voltage200 V
current_rating19.4 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTube, Rail
rds_drain_to_source_resistance_on150 mΩ
rohs_statusCompliant
pin_count3
power_dissipation50.0 W
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