FQPF19N20 Купить в Москве

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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Transistor Polarity	N Channel
Continuous Drain Current Id	11.8A
Drain Source Voltage Vds	200V
On Resistance Rds(on)	150mohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	5V
Power Dissipation Pd	50W
Transistor Case Style	TO-220F
No. of Pins	3Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	-
SVHC	No SVHC (15-Jun-2015)
Current Id Max	11.8A
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Pulse Current Idm	48A
Voltage Vds Typ	200V
Voltage Vgs Max	30V
Voltage Vgs Rds on Measurement	10V
polarity	N-Channel
voltage_rating_dc	200 V
breakdown_voltage_gate_to_source	-30.0 V to 30.0 V
id_continuous_drain_current	11.8 A
breakdown_voltage_drain_to_source	200 V
vds_drain_to_source_voltage	200 V
current_rating	19.4 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Through Hole
packaging	Tube, Rail
rds_drain_to_source_resistance_on	150 mΩ
rohs_status	Compliant
pin_count	3
power_dissipation	50.0 W