FQPF4N90C Купить в Москве

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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Количество в упаковке	50
Вес	2.865 г
polarity	N-Channel
voltage_rating_dc	900 V
breakdown_voltage_gate_to_source	-30.0 V to 30.0 V
id_continuous_drain_current	4.00 A
breakdown_voltage_drain_to_source	900 V
vds_drain_to_source_voltage	900 V
current_rating	4.00 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Through Hole
packaging	Tube
rds_drain_to_source_resistance_on	4.20 Ω
rohs_status	Compliant
pin_count	3
power_dissipation	47.0 W
Transistor Polarity	N Channel
Continuous Drain Current Id	4A
Drain Source Voltage Vds	900V
On Resistance Rds(on)	3.5ohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	5V
Power Dissipation Pd	47W
Transistor Case Style	TO-220F
No. of Pins	3Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	-
SVHC	No SVHC (15-Jun-2015)