• FQS4901TF
  • FQS4901TF
  • FQS4901TF
  • FQS4901TF
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

polarityN-Channel, P-Channel
input_capacitance210 pF
voltage_rating_dc400 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current450 mA
gate_charge7.50 nC
power_dissipation2.00 W
vds_drain_to_source_voltage400 V
current_rating450 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingReel
case_packageSOIC, SOP
lifecycle_statusActive
rohs_statusCompliant
pin_count8
Transistor PolarityDual N Channel
Continuous Drain Current Id450mA
Drain Source Voltage Vds400V
On Resistance Rds(on)3.2ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd2W
Transistor Case StyleSOP
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
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